As with CF 3, no transfer of fluorine from carbon to silicon is observed, even after argon-ion sputtering or ultraviolet irradiation of the surface. CF 2, produced by excimer-laser photolysis of C 2F 4, is adsorbed on SiO 2 surfaces. While CF 3 undergoes dissociative chemisorption on Si, it adsorbs very little on annealed SiO 2 surfaces, and even on ion-damaged oxide surfaces, CF 3 adsorbs but does not undergo transfer of fluorine from the fluorocarbon to surface silicon atoms.
CF 3 free radicals are generated by infrared multiple-photon dissociation of C 2F 6.
We have investigated the reactions of neutral fluorocarbon fragments, generated by laser photolysis of suitable precursors, with single-crystal silicon and thermally deposited silicon oxide surfaces.
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